AFT09MS007NT1 RF Power LDMOS Transistor

NXP

Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .

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Datasheet Specifications

Part number: AFT09MS007NT1
Manufacturer: NXP ↗
File Size: 1.38 MB
Datasheet: AFT09MS007NT1-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz)

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AFT09MS007NT1 Power LDMOS Transistor NXP

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