* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext
AFT09MS007NT1 Datasheet (1.38 MB)
AFT09MS007NT1
1.38 MB
Rf power ldmos transistor.
Freescale Semiconductor Technical Data
RF Power LDMOS Transistor
High Ruggedness N
*Channel Enhancement
*Mode Lateral MOSFET
Designed .
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