AFT09MS007NT1 Datasheet - NXP

AFT09MS007NT1 RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET Designed for handheld two way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large signal, common source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gp.

AFT09MS007NT1 Features

* Characterized for Operation from 136 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband

* Full Power Across the Band

* Exceptional Thermal Performance

* Ext

AFT09MS007NT1-NXP.pdf