AFT09MS007NT1 Datasheet - NXP

datasheet Preview Page 1 from Datasheet4u.com

AFT09MS007NT1 RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .

AFT09MS007NT1-NXP.pdf

AFT09MS007NT1 Datasheet Preview — Preview of AFT09MS007NT1 PDF

Datasheet Details

Part number:

AFT09MS007NT1

Manufacturer:

NXP ↗

File Size:

1.38 MB

Description:

RF Power LDMOS Transistor

Features

* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz)

AFT09MS007NT1 Distributors

📁 Related Datasheet

AFT05MS004NT1 AFT2222A AFT240320E-2.2-9340-34A34

📌 All Tags

AFT09MS007NT1 Power LDMOS Transistor NXP

NXP AFT09MS007NT1-like datasheet