Datasheet Details
- Part number
- AFT09MS007NT1
- Manufacturer
- NXP ↗
- File Size
- 1.38 MB
- Datasheet
- AFT09MS007NT1-NXP.pdf
- Description
- RF Power LDMOS Transistor
AFT09MS007NT1 Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .
AFT09MS007NT1 Features
* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext
AFT09MS007NT1 Applications
* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
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