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AFT05MP075NR1 RF Power LDMOS Transistors

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Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs Designe.

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Datasheet Specifications

Part number
AFT05MP075NR1
Manufacturer
NXP ↗
File Size
1.03 MB
Datasheet
AFT05MP075NR1-NXP.pdf
Description
RF Power LDMOS Transistors

Features

* Characterized for Operation from 136 to 520 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W)

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