AFT05MP075NR1 - RF Power LDMOS Transistors

NXP

AFT05MP075NR1 Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs Designe.

AFT05MP075NR1 Features

* Characterized for Operation from 136 to 520 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

AFT05MP075NR1 Applications

* with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W)

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AFT05MP075NR1 Datasheet Preview — Preview of AFT05MP075NR1 PDF

Datasheet Details

Part number: AFT05MP075NR1
Manufacturer: NXP ↗
File Size: 1.03 MB
Datasheet: AFT05MP075NR1-NXP.pdf
Description: RF Power LDMOS Transistors

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