Datasheet4U Logo Datasheet4U.com

AFT09MS015NT1

RF Power LDMOS Transistor

AFT09MS015NT1 Features

* Characterized for Operation from 136 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband

* Full Power Across the Band

* Exceptional Thermal Performance

* Ext

AFT09MS015NT1 Datasheet (855.79 KB)

Preview of AFT09MS015NT1 PDF

Datasheet Details

Part number:

AFT09MS015NT1

Manufacturer:

NXP ↗

File Size:

855.79 KB

Description:

Rf power ldmos transistor.
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N

*Channel Enhancement

*Mode Lateral MOSFET Designed .

📁 Related Datasheet

AFT09MS007NT1 - RF Power LDMOS Transistor (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t.

AFT09MS031GNR1 - RF Power LDMOS Transistor (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile t.

AFT09MS031NR1 - RF Power LDMOS Transistor (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile t.

AFT05MP075GNR1 - RF Power LDMOS Transistors (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile t.

AFT05MP075NR1 - RF Power LDMOS Transistors (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile t.

AFT05MS003N - RF Power LDMOS Transistor (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t.

AFT05MS004NT1 - RF Power LDMOS Transistor (Freescale Semiconductor)
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t.

AFT05MS006NT1 - RF Power LDMOS Transistor (NXP)
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t.

TAGS

AFT09MS015NT1 Power LDMOS Transistor NXP

Image Gallery

AFT09MS015NT1 Datasheet Preview Page 2 AFT09MS015NT1 Datasheet Preview Page 3

AFT09MS015NT1 Distributor