AFT05MS003N RF Power LDMOS Transistor

NXP

Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .

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Datasheet Specifications

Part number: AFT05MS003N
Manufacturer: NXP ↗
File Size: 1.19 MB
Datasheet: AFT05MS003N-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized for Operation from 1.8 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MH

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AFT05MS003N Power LDMOS Transistor NXP

NXP AFT05MS003N-like datasheet