Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs Designe.
Features
* Characterized for Operation from 136 to 520 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext
Applications
* with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW
Gps
D
Pout
Frequency
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(W)