AFT05MP075GNR1, AFT05MP075NR1 Datasheet - NXP

AFT05MP075GNR1 RF Power LDMOS Transistors

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs Designed for mobile two way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W) 13.

AFT05MP075GNR1 Features

* Characterized for Operation from 136 to 520 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband

* Full Power Across the Band

* Exceptional Thermal Performance

* Ext

AFT05MP075NR1-NXP.pdf