Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs Designe.
Features
* Characterized for Operation from 764 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band (764
* 870 MHz)
Applications
* with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (
