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AFT09MS031GNR1, AFT09MS031NR1 RF Power LDMOS Transistor

AFT09MS031GNR1 Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs Designe.

AFT09MS031GNR1 Features

* Characterized for Operation from 764 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band (764
* 870 MHz)

AFT09MS031GNR1 Applications

* with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFT09MS031GNR1, AFT09MS031NR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFT09MS031GNR1, AFT09MS031NR1
Manufacturer
NXP ↗
File Size
1.03 MB
Datasheet
AFT09MS031NR1-NXP.pdf
Description
RF Power LDMOS Transistor
Note
This datasheet PDF includes multiple part numbers: AFT09MS031GNR1, AFT09MS031NR1.
Please refer to the document for exact specifications by model.

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