AFT05MS006NT1 Datasheet - NXP

AFT05MS006NT1, RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .

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AFT05MS006NT1-NXP.pdf

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Datasheet Details

Part number:

AFT05MS006NT1

Manufacturer:

NXP ↗

File Size:

0.97 MB

Description:

RF Power LDMOS Transistor

Features

* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) G

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AFT05MS006NT1 Power LDMOS Transistor NXP

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