* Greater negative gate
* source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems
* Optimized for Doherty applications AFT20S015N AFT20S015GN 1805
* 2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS TO
AFT20S015N Datasheet (737.05 KB)
AFT20S015N
737.05 KB
Rf power ldmos transistors.
NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N Channel Enhancement Mode .
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