AFT20S015GN - RF Power LDMOS Transistors
NXP Semiconductors Technical Data Document Number: AFT20S015N Rev.
2, 04/2020 RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
2100 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 2110
AFT20S015GN Features
* Greater negative gate
* source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems
* Optimized for Doherty applications AFT20S015N AFT20S015GN 1805
* 2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS TO
