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AFT20S015GN, AFT20S015N Datasheet - NXP

AFT20S015GN - RF Power LDMOS Transistors

NXP Semiconductors Technical Data Document Number: AFT20S015N Rev.

2, 04/2020 RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.

2100 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency 2110

AFT20S015GN Features

* Greater negative gate

* source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Optimized for Doherty applications AFT20S015N AFT20S015GN 1805

* 2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS TO

AFT20S015N-NXP.pdf

This datasheet PDF includes multiple part numbers: AFT20S015GN, AFT20S015N. Please refer to the document for exact specifications by model.
AFT20S015GN Datasheet Preview Page 2 AFT20S015GN Datasheet Preview Page 3

Datasheet Details

Part number:

AFT20S015GN, AFT20S015N

Manufacturer:

NXP ↗

File Size:

737.05 KB

Description:

Rf power ldmos transistors.

Note:

This datasheet PDF includes multiple part numbers: AFT20S015GN, AFT20S015N.
Please refer to the document for exact specifications by model.

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