AFT20S015GN, AFT20S015N - RF Power LDMOS Transistors

NXP

AFT20S015GN Description

NXP Semiconductors Technical Data Document Number: AFT20S015N Rev.2, 04/2020 RF Power LDMOS Transistors N *Channel Enhancement *Mode .

AFT20S015GN Features

* Greater negative gate
* source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems

AFT20S015GN Applications

* covering the frequency range of 1805 to 2700 MHz. 2100 MHz
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.5 17.6 17.6 D Outpu

📥 Download Datasheet

AFT20S015GN Datasheet Preview — This datasheet PDF includes multiple part numbers: AFT20S015GN, AFT20S015N. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: AFT20S015GN, AFT20S015N
Manufacturer: NXP ↗
File Size: 737.05 KB
Datasheet: AFT20S015N-NXP.pdf
Description: RF Power LDMOS Transistors
Note: This datasheet PDF includes multiple part numbers: AFT20S015GN, AFT20S015N.
Please refer to the document for exact specifications by model.

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Power LDMOS Transistors NXP

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AFT20S015GN Stock/Price