AFT20S015GN Datasheet - NXP

AFT20S015GN RF Power LDMOS Transistors

NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110.

AFT20S015GN Features

* Greater negative gate

* source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Optimized for Doherty applications AFT20S015N AFT20S015GN 1805

* 2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS TO

AFT20S015GN Datasheet (737.05 KB)