16M-WORD Datasheet | Specifications & PDF Download

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,

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IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,77

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IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fu

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast acc

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IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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OKI Semiconductor MR27V12800J P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit FEATURES ·8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically swit

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OKI Semiconductor MR27V12850J P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit Page mode FEDR27V12850J-02-03 Issue Date: Jul. 9, 2004 FEATURES ·8,388,608-

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OKI Semiconductor MR27V12850L P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit Page mode FEDR27V12850L-02-01 Issue Date: May. 9, 2005 FEATURES ·8,388,608-

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OKI Semiconductor MR27T12800L P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit FEDR27T12800L-02-01 Issue Date: Jun. 13, 2005 FEATURES ·8,388,608-word × 16

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OKI Semiconductor MR27T12800J 8M–Word × 16–Bit or 16M–Word × 8–Bit FEDR27T12800J-02-07 Issue Date: Jul. 9, 2004 P2ROM PIN CONFIGURATION (TOP VIEW) M

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IC66LV10016AL Document Title w w . U 4BY 16-BIT) Low Power Pseudo SRAM 16M-BIT (1M-WORD t e e h Revision History S Revision a No History t a D . w

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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