16M-Word Datasheet | Specifications & PDF Download

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is a

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES, 4516CD641PS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-4516CD

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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OKI Semiconductor MR27V12850L P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit Page mode FEDR27V12850L-02-01 Issue Date: May. 9, 2005 FEATURES ·8,388,608-

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA726 is a

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MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This docume

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SGRAM (Rev. 0.0) Jan'97 Preliminary MITSUBISHI LSIs M5M4V16G50DFP -8, -10, -12 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM PRELIM

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SGRAM (Rev. 0.0) Jan'97 Preliminary MITSUBISHI LSIs M5M4V16G50DFP -8, -10, -12 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM PRELIM

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SGRAM (Rev. 0.0) Jan'97 Preliminary MITSUBISHI LSIs M5M4V16G50DFP -8, -10, -12 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM PRELIM

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OKI Semiconductor MR27T12800J 8M–Word × 16–Bit or 16M–Word × 8–Bit FEDR27T12800J-02-07 Issue Date: Jul. 9, 2004 P2ROM PIN CONFIGURATION (TOP VIEW) M

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,77

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777

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