Mitsubishi
M5M4V16169DTP-8 - 16M (1M-WORD BY 16-BIT) CACHED DRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary This docume
(9 views)
Hitachi Semiconductor
HB56SW3272ESK-6 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(8 views)
Mitsubishi
M5M4V16169DTP-10 - 16M (1M-WORD BY 16-BIT) CACHED DRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary This docume
(7 views)
ETC
GLT5160L16 - 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast acc
(6 views)
ISSI
IS42S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F
512K Words x 16 Bits x 2 Banks 16Mb SDRAM
JUNE 2012
FEATURES
• Clock frequency:
IS42/45S16100F: 200, 166, 143 MHz
(6 views)
OKI
MR27V12850J - 8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
OKI Semiconductor MR27V12850J
P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit Page mode
FEDR27V12850J-02-03
Issue Date: Jul. 9, 2004
FEATURES
·8,388,608-
(6 views)
NEC
MC-4516DA727 - 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516DA727
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
Description
The MC-4516DA727 is a
(6 views)
Integrated Circuit Solution
IC66LV10016AL - 16M-BIT (1M-WORD BY 16-BIT) Low Power Pseudo SRAM
IC66LV10016AL
Document Title
w
w
. U 4BY 16-BIT) Low Power Pseudo SRAM 16M-BIT (1M-WORD t e e h Revision History S Revision a No History t a D . w
(6 views)
Integrated Silicon Solution
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E IS45S16100E
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
JUNE 2010
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fu
(6 views)
Hitachi Semiconductor
HB56SW3272ESK-5 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(5 views)
Mitsubishi
M5M4V16169DTP-7 - 16M (1M-WORD BY 16-BIT) CACHED DRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary This docume
(5 views)
Mitsubishi
M5M4V16169DTP-15 - 16M (1M-WORD BY 16-BIT) CACHED DRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary This docume
(5 views)
ISSI
IS42VS16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F
512K Words x 16 Bits x 2 Banks 16Mb SDRAM
JUNE 2012
FEATURES
• Clock frequency:
IS42/45S16100F: 200, 166, 143 MHz
(5 views)
ISSI
IS45S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F
512K Words x 16 Bits x 2 Banks 16Mb SDRAM
JUNE 2012
FEATURES
• Clock frequency:
IS42/45S16100F: 200, 166, 143 MHz
(5 views)
OKI
MR27V12850L - 8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
OKI Semiconductor
MR27V12850L
P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit Page mode
FEDR27V12850L-02-01 Issue Date: May. 9, 2005
FEATURES
·8,388,608-
(5 views)
OKI
MR27T12800L - 8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T12800L
P2ROM8M–Word × 16–Bit or 16M–Word × 8–Bit
FEDR27T12800L-02-01 Issue Date: Jun. 13, 2005
FEATURES
·8,388,608-word × 16
(5 views)
Elpida Memory
MC-4516CA727XFA - 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CA727XFA
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Description
The MC-4516CA727XFA
(5 views)
Elpida Memory
MC-4516CB647XFA - 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB647XFA
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Description
The MC-4516CB647XFA
(5 views)
Mitsubishi
M5M4V16169DRT-15 - 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(5 views)
Mitsubishi
M5M4V16169DRT-7 - 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(5 views)