180N10N (Infineon)
Power Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
(27 views)
IPD180N10N3G (Infineon)
Power-Transistor
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
(25 views)
IPP180N10N3G (Infineon)
Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
(24 views)
IPA180N10N3G (Infineon Technologies)
Power-Transistor
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
(20 views)
IPP180N10N3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP180N10N3，IIPP180N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤18mΩ ·Enhance
(19 views)
IPP180N10N3 (Infineon)
Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
(16 views)
IPI180N10N3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI180N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤18mΩ ·Enhancement mode ·Fa
(16 views)
IPI180N10N3G (Infineon)
Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
(14 views)
IPI180N10N3 (Infineon)
Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 H( 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 (
(14 views)
IPA180N10N3 (Infineon)
Power-Transistor
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
(14 views)
IPD180N10N3 (Infineon)
Power-Transistor
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc
(14 views)
IPA180N10N3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switc
(13 views)
IPD180N10N3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanch
(13 views)
