190 Datasheet | Specifications & PDF Download

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Product Specification □ Preliminary Specification ■ Final Specification Module Model Name 19.0” SXGA Color TFT-LCD G190EG01 V1 --EC Version G190EG

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Data Travo Flyback FA061WJ-SA Tampak Bawah Skema Koneksi Kode Koneksi : 12-3467-589-10 No. Pin 1 2 Fungsi H B+130 3 4 5 6 7 8 9 10 GND 24 12 AF

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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PRESETTABLE BCD/DECADE UP/DOWN COUNTERS PRESETTABLE 4-BIT BINARY UP/DOWN COUNTERS The SN54 / 74LS190 is a synchronous UP/ DOWN BCD Decade (8421) Count

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SMD LED Product Data Sheet LTST-C190KFKT-5A Spec No. :DS22-2007-0073 Effective Date: 09/04/2021 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-O

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HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •

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SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2190 (FP10W50VX2) 500V 10A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DI

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Silicon Double Balanced HMICTM Mixer, 1300 - 1900 MHz V 1.00 MA4EX180M-1225 Features n n n n n n n Package Outline 3 2 1 Low Cost Miniature Plast

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient P

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LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 January 2004 LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 General Description The LMX2604 i

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ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC(cont) = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5

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MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

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SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. FEATURE ᴌLow Noise Figure : NF=3.5dB(Max.)

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MDD1902 – Single N-Channel Trench MOSFET 100V MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ General Description The MDD1902 uses advanced M

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GigaDevice Semiconductor Inc. GD32F190xx ARM® Cortex®-M3 32-bit MCU Datasheet GD32F190xx Datasheet Table of Contents Table of Contents

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Surface Mount Zener Diodes COMCHIP www.comchiptech.com CZRB2110 -CZRB2350 Voltage:110-350 Volts Power: 2.0 Watts Features Low profile package Built

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HTG2190 8-Bit 1024 Pixel LCD Microcontroller Features · · · · · · · · · · Operating voltage: 2.4V~3.6V 64K´16 bits program ROM 2.3K´8 bits data RAM 1

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