190 Datasheet | Specifications & PDF Download

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge

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STEEL -2 -3 -4 -5 -6 -8 -10 FLARELESS TUBE FITTINGS DASH NUMBER ALUMINIUM STAINLESS TUBE SIZE THREAD SIZE -2 D -2J 1/8 .3125-24 -3 D -3J 3/16

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Data Travo Flyback FA061WJ-SA Tampak Bawah Skema Koneksi Kode Koneksi : 12-3467-589-10 No. Pin 1 2 Fungsi H B+130 3 4 5 6 7 8 9 10 GND 24 12 AF

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isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V

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PRESETTABLE BCD/DECADE UP/DOWN COUNTERS PRESETTABLE 4-BIT BINARY UP/DOWN COUNTERS The SN54 / 74LS190 is a synchronous UP/ DOWN BCD Decade (8421) Count

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http://www.ncepower.com Pb Free Product NCE7190A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technolog

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() CRJQ190N65GCF SJMOS N-MOSFET 650V, 185mΩ, 23A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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Pb Free Product http://www.ncepower.com NCE7190 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE719 0 uses adv anced trenc h techno

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MMF60R190Q Datasheet MMF60R190Q 600V 0.19Ω N-channel MOSFET  Description MMF60R190Q is power MOSFET using Magnachip’s advanced super junction techno

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Approval Specification Customer : General SAMSUNG TFT-LCD DATE : 14/Dec/2005 MODEL : LTM190EX-L21 Any Modification of Specification is not allowed

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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SN54190, SN54191, SN54LS190, SN54LS191, SN74190, SN74191, SN74LS190, SN74LS191 SYNCHRONOUS UP/DOWN COUNTERS WITH DOWN/UP MODE CONTROL SDLS072 – DECEMB

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