1980 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Semiconductor 2SA1980 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturatio

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2SA1980 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -150 mA, -50 V PNP Plastic Encapsulated Trans

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor betwe

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Doub

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

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MAMXES0005 E-Series Surface Mount Mixer 1920-1980 MHz Features • • • LO Power +17 dBm Up to +14 dBm RF Surface Mount SM-2 Package Description M/A-C

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Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Doub

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MAMXES0005 E-Series Surface Mount Mixer 1920-1980 MHz Features • • • LO Power +17 dBm Up to +14 dBm RF Surface Mount SM-2 Package Description M/A-C

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Final Electrical Specifications LTC1980 www.DataSheet4U.com Combination Battery Charger and DC/DC Converter May 2003 FEATURES s s DESCRIPTIO s s

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Semiconductor 2SA1980 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0

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Semiconductor 2SA1980S PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-

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MMBTSA1980W PNP Silicon Epitaxial Planar Transistor for general small signal amplifier applications. The transistor is subdivided into four groups, O,

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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ACPM-7382 UMTS Band1 (1920-1980MHz) 4x4 Power Amplifier Module Data Sheet Description The ACPM-7382 is a fully matched 10-pin surface mount module de

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M_5-AA s eries Ø27.5 mm 10-21 W MODEL NO. DESIGNATIONS MOTOR DATA Part name Diameter (mm) Lenth (mm) Nominal voltage (V) Nominal speed (rpm) Nomin

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD1980J3 BVCEO IC RCESAT Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.

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isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da

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