1980 Datasheet | Specifications & PDF Download

RMPA2265 December 2004 RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description The RMPA2265 power

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2SA1980 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -150 mA, -50 V PNP Plastic Encapsulated Trans

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor betwe

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Semiconductor 2SA1980S PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-

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1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applic

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MMBTSA1980W PNP Silicon Epitaxial Planar Transistor for general small signal amplifier applications. The transistor is subdivided into four groups, O,

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

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Semiconductor 2SA1980 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Doub

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Ordering number : EN5974 Monolithic Digital IC LB1980H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview The LB1980H is a 3-phase

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ACPM-7382 UMTS Band1 (1920-1980MHz) 4x4 Power Amplifier Module Data Sheet Description The ACPM-7382 is a fully matched 10-pin surface mount module de

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da

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Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm

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Semiconductor 2SA1980E PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=

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Semiconductor 2SA1980EF PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)

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? Semiconductor 2SA1980M PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat

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