D1980
Inchange Semiconductor
220.61kb
Silicon npn power transistor.
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D1980 - 2SD1980
(Rohm)
Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu.
D1985 - 2SD1985
(Panasonic Semiconductor)
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
s Featu.
D1902 - 2SD1902
(Sanyo)
Ordering number:EN2538A
PNP/NPN Triple Diffused Planar Type Silicon Transistors
2SB1266/2SD1902
AF Power Amplifier Applications
Features
· Suitable .
D1903 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
Ordering number:EN2263A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1267/2SD1903
30V/8A High-Current Switching Applications
Applications
· Suita.
D1904 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
Ordering number:EN2264B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1268/2SD1904
High-Current Switching Applicatons
Applications
· Suitable for .
D1906 - PNP/NPN Epitaxial Planar Type Silicon Transistors
(Sanyo)
Ordering number:EN2266A
PNP/NPN Epitaxial Planar Type Silicon Transistors
2SB1270/2SD1906
High-Current Switching Applications
Applications
· Suitabl.
D1907 - PNP/NPN Epitaxial Planar Type Silicon Transistors
(Sanyo)
Ordering number:EN2267B
PNP/NPN Epitaxial Planar Type Silicon Transistors
2SB1271/2SD1907
High-Current Switching Applications
Applications
· Suitabl.
D1910 - 2SD1910
(Wing Shing Electronic)
2SD1910
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.
D1911 - 2SD1911
(Wing Shing Computer Components)
2SD1911
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.
D1912 - 2SD1912
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C.