D1912 Datasheet - Inchange Semiconductor

D1912, 2SD1912

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min). Wide Area of Safe Operation. Low Collector Saturation Voltage APPLICATIONS.

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Datasheet Details

Part number:

D1912

Manufacturer:

Inchange Semiconductor

File Size:

131.46 KB

Description:

2SD1912

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-P

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