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D1912 - 2SD1912

D1912 Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min). Wide Area of Safe Operation. Low Collector Saturation Voltage APPLICATIONS.

D1912 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-P

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2SD1912 Inchange Semiconductor
Inchange Semiconductor D1912-like datasheet