Datasheet Details
- Part number
- D1912
- Manufacturer
- Inchange Semiconductor
- File Size
- 131.46 KB
- Datasheet
- D1912-InchangeSemiconductor.pdf
- Description
- 2SD1912
D1912 Description
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min).
Wide Area of Safe Operation.
Low Collector Saturation Voltage
APPLICATIONS.
D1912 Applications
* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-P
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