1A60 Datasheet | Specifications & PDF Download

1A60 Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in

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1A60 Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in

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TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications • Low drain-source ON resis

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  ADV                                                                              ADS1A60W/80W SCRs General Description Sensitive triggering SCR is

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31A60W, ITK31A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.073Ω (typ.) ·Easy

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Applications ● Interior automotive lighting(dashboard backlight etc ) ● Optical indicators ● High Tech Lightning ● Security Parts ● Automotive Produ

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www.DataSheet4U.com SemiWell Semiconductor Bi-Directional Triode Thyristor STN1A60/80 Symbol Features Repetitive Peak Off-State Voltage : 600/800V

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www.DataSheet4U.com DTN1A60/80 Triacs / Sensitive Gate Features Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A )

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• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED •

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• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • META

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DATA SHEET SE2521A60: 2.4 GHz Wireless LAN Front-End Applications  IEEE802.11b DSSS WLAN  IEEE802.11g OFDM WLAN  Access Points, PCMCIA, PC cards F

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TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications • • • • Low drain-source ON

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1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100 Available on commercial versions 1 Amp Schottky Barrier Rectifiers Qualified per MIL-

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CD5817 thru CD5819, CD6759 thru CD6761, CD1A20 thru CD1A100 Schottky Barrier Rectifier Chip Series Features  1 Amp Schottky Barrier Rectifier Chips

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• 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPA

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  ADV                                                                                      ADS1A60/80 SCRs General Description Sensitive triggering

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www.DataSheet4U.com SE2521A60 RangeCharger™ 2.4 GHz Wireless LAN Front End Applications ƒ ƒ ƒ IEEE802.11b DSSS WLAN IEEE802.11g OFDM WLAN Access Poi

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SPECIFICATION OF FBM□-_ _ _ _A□□ SERIES APPLICATIONS 1. EMI suppression for various electric equipment by the addition of impedance to the circuit. 2.

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Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and fo

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HTB1A60_HTB1A80 HTB1A60/HTB1A80 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(RMS

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