M38C31M5MXXXFP (Mitsubishi)
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
(3 views)
M12L64164A-7BG2Y (ESMT)
1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key
(3 views)
GM71C17800C (Hynix Semiconductor)
1M-WORDS x 8-BIT CMOS DYNAMIC RAM
GM71C17800C GM71CS17800CL
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
Description
The GM71C(S)17800C/CL is the new generation dynamic RAM organized 2,09
(2 views)
MBM29LV160B-80 (Fujitsu)
16M (2M x 8/1M x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20846-4E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
s FEATURES
(2 views)
M5M4C1000J-15 (Mitsubishi)
Fast Page Mode 1M-Bit DRAM
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(2 views)
M5M51008BVP-12VL (Mitsubishi)
1M-Bit CMOS Static RAM
1997-1/21 MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RA
(2 views)
HYB3116160BST-70 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
• • •
1 048 576 wor
(2 views)
HYB3118165BST-50 (Siemens Semiconductor Group)
1M x 16-Bit Dynamic RAM 1k Refresh
1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperat
(2 views)
CY7C1460KVE33 (Cypress Semiconductor)
36-Mbit (1M x 36/2M x 18) Pipelined SRAM
CY7C1460KV33 CY7C1460KVE33 CY7C1462KVE33
36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)
36-Mbit (1M × 36/2M × 18) Pipeli
(2 views)
CY7C1372KV25 (Cypress Semiconductor)
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1370KV25 CY7C1372KV25
18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Ar
(2 views)
HY29F800 (Hynix Semiconductor)
8 Megabit (1Mx8/512Kx16)/ 5 Volt-only/ Flash Memory
HY29F800
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(2 views)
HY29LV160BT-80 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(2 views)
HY29LV160BT-90 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(2 views)
HY29LV160BT-90I (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(2 views)
HY29LV160TT-12 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(2 views)
HY29LV160TT-70I (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(2 views)
HY29LV800T-55I (Hynix Semiconductor)
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2
(2 views)
K4E151611C (Samsung)
1M x 16Bit CMOS Dynamic RAM
K4E171611C, K4E151611C K4E171612C, K4E151612C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,57
(2 views)
K4S641632C (Samsung semiconductor)
1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four bank
(2 views)
K5P2880YCM (Samsung semiconductor)
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
K5P2880YCM - T085
Document Title
Multi-Chip Package MEMORY
128M Bit (16Mx8) Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM
Revision History
(2 views)
