1N1 Datasheet | Specifications & PDF Download

lN429 1N1530 series 1N1735 series lN4057 series Temperature compensated zener reference diodes designed for reference sources utilizing an oxide-pass

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Thro

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1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage c

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RT1N144X SERIES DESCRIPTION RT1N144X is a one chip transistor with built-in bias resistor,PNP type is RT1P144X. FEATURE ・Built-in bias resistor (R1=10

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SPECIFICATION FOR LCD MODULE MODULE NO: AFK1024600A1-10.1N12NTM REVISION NO: V02 Customer’s Approval: PREPARED BY (RD ENGINEER) CHECKED BY APPROVED B

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Photologic® Slotted Optical Switch OPB460, OPB470, OPB480, OPB490 Series Features:  Choice of pins or wires mounting configuration  Choice of ape

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UNISONIC TECHNOLOGIES CO., LTD UG1N120 Preliminary Insulated Gate Bipolar Transistor 5.3A, 1200V NPT SERIES N-CHANNEL IGBT  DESCRIPTION The UTC

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UNISONIC TECHNOLOGIES CO., LTD 81CXX/81NXX VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME CMOS IC  DESCRIPTION The UTC 81CXX and 81NXX series are good

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW

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MOSFET – Power, Single N-Channel 100 V, 23 mW, 31 A NVMFS021N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize

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http://www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench I

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VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DO-203AB

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet January 2000 File Number 4577.2 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N

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HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The

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