1N1 Datasheet | Specifications & PDF Download

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and www.dat

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1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage c

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SYT01N12DWC Low Capacitance TVS Protection Features Applications  Transient Protection for High-speed Data Lines IEC 61000-4-2 (ESD) ±30kV (Air) ±

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HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11

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HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Thro

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 110mΩ ID 15A G UIS, Rg 100% Tested

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lN429 1N1530 series 1N1735 series lN4057 series Temperature compensated zener reference diodes designed for reference sources utilizing an oxide-pass

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 R3111E (TO-92) is the discontinued product as of April, 2017. R3111x SERIES LOW VOLTAGE DETECTOR NO.EA-056-170428 OUTLINE The R3111x series are C

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud i

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 110mΩ ID 15A G UIS, Rg 100% Tested

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IGB01N120H2 HighSpeed 2-Technology • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2nd generation HighSpee

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High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG

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Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW

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NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design. T

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