lN429 1N1530 series 1N1735 series lN4057 series Temperature compensated zener reference diodes designed for reference sources utilizing an oxide-pass

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOS

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOS

lN1313 thru lN1327 CASE 53 Very low power zener diodes with standard ±10% tolerances. Available with ±5.0% tolerance by adding suffix A to type nu

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Thro

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. :

R1121N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-058-111026 OUTLINE The R1121N Series are CMOS-based voltage regulator ICs with high output voltag

AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

R1121N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-058-111026 OUTLINE The R1121N Series are CMOS-based voltage regulator ICs with high output voltag

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N

R1111N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-057-120206 OUTLINE The R1111N Series are CMOS-based voltage regulator ICs with high output voltag

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

RT1N144X SERIES DESCRIPTION RT1N144X is a one chip transistor with built-in bias resistor,PNP type is RT1P144X. FEATURE ・Built-in bias resistor (R1=10

www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud

Public IPB021N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑res

Silicon N-Channel Po wer MOSFET HM01N100PR General Description： HM01N100PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

SPECIFICATION FOR LCD MODULE MODULE NO: AFK1024600A1-10.1N12NTM REVISION NO: V02 Customer’s Approval: PREPARED BY (RD ENGINEER) CHECKED BY APPROVED B

lN1313 thru lN1327 CASE 53 Very low power zener diodes with standard ±10% tolerances. Available with ±5.0% tolerance by adding suffix A to type nu