lN429 1N1530 series 1N1735 series lN4057 series Temperature compensated zener reference diodes designed for reference sources utilizing an oxide-pass

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOS

R1121N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-058-111026 OUTLINE The R1121N Series are CMOS-based voltage regulator ICs with high output voltag

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOS

MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. :

Silicon N-Channel Po wer MOSFET HM01N100PR General Description： HM01N100PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

lN1313 thru lN1327 CASE 53 Very low power zener diodes with standard ±10% tolerances. Available with ±5.0% tolerance by adding suffix A to type nu

R1121N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-058-111026 OUTLINE The R1121N Series are CMOS-based voltage regulator ICs with high output voltag

R1111N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-057-120206 OUTLINE The R1111N Series are CMOS-based voltage regulator ICs with high output voltag

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N

HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES lN1730 thru lN1734 lN2382 thru lN2385 CASE 41 Standard single - phase, half-wave, high -voltage si

WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V Descriptions The WNM01N10 is N-

WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi