1N5 Datasheet | Specifications & PDF Download

OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

(268 views)

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

(254 views)

File No.3 - - - - - - - - - - - - - - - - - - - - ' - - - - - - - - - - - - - - - ffilm3LJlJ Rectifiers Solid State Division 1N5361N5381N540 1N537

(190 views)

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

(142 views)

SILICON RECTIFIER VOLTAGE RANGE 1000 Volts CURRENT 3.0 Ampere 1N5400 THRU 1N5408 FEATURES * Low cost * Low leakage * Low forward voltage drop * High

(120 views)

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

(119 views)

CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability -

(113 views)

1N5400-1N5408 Technical Data Data Sheet N0547, Rev. A 1N5400 THRU 1N5408 GLASS PASSIVATED SILICON RECTIFIER Features DO-201AD  The plastic package

(112 views)

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

(104 views)

www.DataSheet.co.kr 1N5844 5.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . Hig

(83 views)

1N5807-1N5811 High-reliability discrete products and engineering services since 1977 HIGH EFFICIENCY RECTIFIERS FEATURES  Available as “HR” (high

(83 views)

(80 views)

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

(76 views)

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

(72 views)

(70 views)

(70 views)

1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS Annular, two terminal devices that exhibit bi-directional negative resistance

(68 views)

(64 views)

GENERAL PURPOSE RECTIFIER RoHS 1N5391 (G) Thru 1N5399 (G) 1.5A DIA FEATURES • 1.5 amps, 50 to 1000V • Available with glass passivated chip junction,

(61 views)

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L

(61 views)