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1N5 Datasheet, Features, Application

1N50 N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary .

WON-TOP
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1N5408 - 3.0A STANDARD DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi.
WON-TOP
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1N5822 - 3.0A SCHOTTKY BARRIER DIODE

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L.
WON-TOP
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1N5399 - 1.5A STANDARD DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi.
AiT Components
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1N5819 - SCHOTTKY DIODES

AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are.
EIC
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1N5402 - SILICON RECTIFIER DIODES

1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r.
EIC
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1N5406 - SILICON RECTIFIER DIODES

1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r.
MXD
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1N5844 - 5.0AMP SCHOTTKY BARRIER RECTIFIERS

www.DataSheet.co.kr 1N5844 5.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . Hig.
Diodes
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1N5221B - 500mW EPITAXIAL ZENER DIODE

OBSOLETE – PART DISCONTINUED PART OBSOLETE - USE MMSZ52xxB 1N5221B - 1N5267B 500mW EPITAXIAL ZENER DIODE SPICE MODEL: spice model number 1, spice m.
ETC
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1N5758 - SILICON 3-LAYER BILATERAL TRIGGERS

1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS ... Annular, two terminal devices that exhibit bi-directional negative resistance.
INCHANGE
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IRFP31N50L - N-Channel MOSFET

iscN-Channel MOSFET Transistor IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS .
Multicomp
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1N5404 - Power Diode

1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current .
Semiware
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1N5819WT - Schottky Barrier Rectifier

R FEATURES Low Forward Voltage Drop Cathode Band / Device marking Surface Mount Package Ideally Suited for Automatic Insertion MECHANICAL DATA Encapsu.
WON-TOP
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1N5392 - 1.5A STANDARD DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi.
Diodes
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1N5401 - 3.0A RECTIFIER

OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability.
CR Micro
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CS1N50ATR - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS1N50 ATR General Description: CS1N50 ATR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
Motorola
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1N5148 - Silicon Tuning Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes Designed for electronic tuning and harmonic–generation applications, and provide solid–sta.
Unisonic Technologies
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1N5408G - GLASS PASSIVATED SILICON RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD 1N5408G GLASS PASSIVATED SILICON RECTIFIER DIODE 1  DESCRIPTION The UTC 1N5408G is a glass passivated silicon rectif.
Eris
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1N5349B - Zener Diode

1N53xxB 1.0 (25.4) MIN. .052 (1.3) DIA. .048 (1.2) 5W Zener Diode .375 (9.5) .335 (8.5) 1.0 (25.4) MIN. .220 (5.6) DIA. .197 (5.0) Ordering Info.
Kexin
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1N5822 - Schottky Diodes

SMD Type Schottky Diodes 1N5820 ~ 1N5822 Diodes ■ Features ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● .
Diodes Incorporated
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1N5349B - 5W ZENER DIODE

1N5344B - 1N5388B 5W ZENER DIODE Features · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Vo.
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