1N5 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes Designed for electronic tuning and harmonic–generation applications, and provide solid–sta

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1N5096-1N5117 MZ211-MZ240 High-reliability discrete products and engineering services since 1977 3 WATT ZENER DIODES FEATURES  Available as “HR” (

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www.DataSheet.co.kr 1N5844 5.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . Hig

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r

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AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

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1N5333B thru 1N5388B Available Silicon 5 Watt Zener Diodes DESCRIPTION The 1N5333B through 1N5388B JEDEC registered series of axial-leaded 5.0 watt

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1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current

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 R3111E (TO-92) is the discontinued product as of April, 2017. R3111x SERIES LOW VOLTAGE DETECTOR NO.EA-056-170428 OUTLINE The R3111x series are C

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1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS Annular, two terminal devices that exhibit bi-directional negative resistance

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1N5913B THRU 1N5956B SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS Central w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDU

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1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r

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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and b

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L

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1N5344B - 1N5388B 5W ZENER DIODE Features · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Vo

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1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application

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