UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary .
WON-TOP
260
1N5408 - 3.0A STANDARD DIODE
® WON-TOP ELECTRONICS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capabi.
WON-TOP
114
1N5822 - 3.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power L.
WON-TOP
94
1N5399 - 1.5A STANDARD DIODE
® WON-TOP ELECTRONICS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capabi.
AiT Components
91
1N5819 - SCHOTTKY DIODES
AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are.
EIC
69
1N5402 - SILICON RECTIFIER DIODES
1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r.
EIC
52
1N5406 - SILICON RECTIFIER DIODES
1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low r.
MXD
51
1N5844 - 5.0AMP SCHOTTKY BARRIER RECTIFIERS
www.DataSheet.co.kr 1N5844 5.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . Hig.
Diodes
46
1N5221B - 500mW EPITAXIAL ZENER DIODE
OBSOLETE – PART DISCONTINUED PART OBSOLETE - USE MMSZ52xxB 1N5221B - 1N5267B 500mW EPITAXIAL ZENER DIODE SPICE MODEL: spice model number 1, spice m.
ETC
39
1N5758 - SILICON 3-LAYER BILATERAL TRIGGERS
1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS ... Annular, two terminal devices that exhibit bi-directional negative resistance.
INCHANGE
39
IRFP31N50L - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS .
Multicomp
35
1N5404 - Power Diode
1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current .
Semiware
35
1N5819WT - Schottky Barrier Rectifier
R FEATURES Low Forward Voltage Drop Cathode Band / Device marking Surface Mount Package Ideally Suited for Automatic Insertion MECHANICAL DATA Encapsu.
WON-TOP
33
1N5392 - 1.5A STANDARD DIODE
® WON-TOP ELECTRONICS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capabi.
Diodes
32
1N5401 - 3.0A RECTIFIER
OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability.
CR Micro
31
CS1N50ATR - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS1N50 ATR General Description： CS1N50 ATR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
Motorola
29
1N5148 - Silicon Tuning Diodes
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes Designed for electronic tuning and harmonic–generation applications, and provide solid–sta.
Unisonic Technologies
27
1N5408G - GLASS PASSIVATED SILICON RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD 1N5408G GLASS PASSIVATED SILICON RECTIFIER DIODE 1 DESCRIPTION The UTC 1N5408G is a glass passivated silicon rectif.
Eris
26
1N5349B - Zener Diode
1N53xxB 1.0 (25.4) MIN. .052 (1.3) DIA. .048 (1.2) 5W Zener Diode .375 (9.5) .335 (8.5) 1.0 (25.4) MIN. .220 (5.6) DIA. .197 (5.0) Ordering Info.
Kexin
25
1N5822 - Schottky Diodes
SMD Type Schottky Diodes 1N5820 ~ 1N5822 Diodes ■ Features ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● .
Diodes Incorporated
25
1N5349B - 5W ZENER DIODE
1N5344B - 1N5388B 5W ZENER DIODE Features · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Vo.