OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

1N5817 THRU 1N5819 PLASTIC SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES DO-41 Low switching noise Low forw

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

File No.3 - - - - - - - - - - - - - - - - - - - - ' - - - - - - - - - - - - - - - ffilm3LJlJ Rectifiers Solid State Division 1N5361N5381N540 1N537

SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes 1N5391 THRU 1N5399 FEATURES * Low cost * Low leakage * Low forward voltage drop

SILICON RECTIFIER VOLTAGE RANGE 1000 Volts CURRENT 3.0 Ampere 1N5400 THRU 1N5408 FEATURES * Low cost * Low leakage * Low forward voltage drop * High

CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability -

AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

1N5400-1N5408 Technical Data Data Sheet N0547, Rev. A 1N5400 THRU 1N5408 GLASS PASSIVATED SILICON RECTIFIER Features DO-201AD  The plastic package

1N5400 - 1N5408 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 3.0 A Features High Current Capability and Low Forward Voltage Dro

MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1N5400GP T

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L

DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N5391 THRU 1N5399 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

1N5391 - 1N5399 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5 A Features · The plastic package carries Underwriters La

HIGH-RELIABILITY PRODUCTS Features • Very low reverse recovery time • Hermetically sealed in lead borosilicate glass sleeve • Low switching losses • S

www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren