1N5817-1 Datasheet | Specifications & PDF Download

AiT Semiconductor Inc. 1N5817W~1N5819W www.ait-ic.com SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817W~1N5819W ar

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 25A Peak  Low Power L

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N5817WS THRU 1N5819WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RA

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SCHOTTKY RECTIFIER Bulletin PD-20646 rev. C 11/04 1N5817 1.0 Amp Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangula

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1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT 1 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabilit

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1N5817S-1N5819S Schottky Barrier Rectifiers Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G

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1N5817, 1N5818, 1N5819 Schottky Barrier Rectifier DO−41 Type Package Absolute Maximum Ratings: Maximum Repetitive Reverse 1N5817 . . . . . . . . . .

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Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junc

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Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier princ

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1N5817W THRU 1N5819W Surface  Mount Schottky Barrier Rectifier Reverse  Voltage - 20 to 40 V Forward Current - 1 A         PINNING PIN 1 2 1 DESCRIP

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1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C wi

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Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficienc

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0

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SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C

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1N5817-1N5819 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliabi

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Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992

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