1N5817-1 Datasheet | Pinout, Features, Price Comparison & PDF

www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

1N5817 THRU 1N5819 PLASTIC SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES DO-41 Low switching noise Low forw

1N5817-1, 1N5817UR-1 Silicon Schottky Barrier Diode Features • Low Forward Voltage: 450 mV @ IF = 1.0 A • Available in JAN, JANTX, JANTXV and JANS per

ShenZhen YueFeiDa Electronics Technology Co.,Ltd 1N5817S THRU 1N5819S FEATURE 1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability .

Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junc

1N5817-1, 1N5817UR-1 Silicon Schottky Barrier Diode Features • Low Forward Voltage: 450 mV @ IF = 1.0 A • Available in JAN, JANTX, JANTXV and JANS per

1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame

1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · High Current Capability Low Forward Voltage Drop Guard Ri

www.vishay.com VS-1N5817, VS-1N5817-M3 Vishay Semiconductors Schottky Rectifier, 1.0 A Cathode Anode DO-204AL PRODUCT SUMMARY Package IF(AV) VR

R SEMICONDUCTOR 1N5817SF THRU 1N5819SF SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere FEATURES SOD-123FL Pl

1N5817W - 1N5819W PRV : 20 - 40 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES SOD-123FL 2.9 2.6 1.1 0.8 1.9 1.7 0.2 0.1 MECHANICAL D

1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit

SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec

SMD Type Schottky Diodes 1N5817WS ~ 1N5819WS TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward

Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar