1N5817-1 Datasheet | Specifications & PDF Download

SCHOTTKY RECTIFIER Bulletin PD-20646 rev. C 11/04 1N5817 1.0 Amp Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangula

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992

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Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junc

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Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier princ

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www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

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AiT Semiconductor Inc. 1N5817W~1N5819W www.ait-ic.com SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817W~1N5819W ar

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 25A Peak  Low Power L

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ShenZhen YueFeiDa Electronics Technology Co.,Ltd 1N5817S THRU 1N5819S FEATURE 1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability .

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0

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Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec

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1N5810 Series Power Diodes - Schottky 1A Axial DO-41 Features: • Low forward voltage drop . • High current capability. • High reliability. • High su

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SMD Type Schottky Diodes 1N5817WS ~ 1N5819WS TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N5817WS THRU 1N5819WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RA

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1N5817W - 1N5819W PRV : 20 - 40 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES SOD-123FL 2.9 2.6 1.1 0.8 1.9 1.7 0.2 0.1 MECHANICAL D

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficienc

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