1N5817-1, 1N5817UR-1 Silicon Schottky Barrier Diod.
Vishay Siliconix
1N5817 - Schottky Barrier Rectifiers
www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF.
Taiwan Semiconductor
1N5817 - Schottky Barrier Rectifiers
1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G.
Kexin
1N5817W - Schottky Barrier Diodes
SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v.
Multicomp
1N5817 - Power Diodes - Schottky
1N5810 Series Power Diodes - Schottky 1A Axial DO-41 Features: • Low forward voltage drop . • High current capability. • High reliability. • High su.
SEMTECH
1N5817WS - 1A Surface Mount Schottky Barrier Diode
1N5817WS~1N5819WS 1 A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Marking Code: 1N5817WS: SK 1N5818.
CHINA BASE
1N5817W - 1A Surface Mount Schottky Barrier Diode
1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame.
JGD
1N5817W - Surface Mount Schottky Barrier Rectifiers
Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12.
SEMTECH
1N5817W - Surface Mount Schottky Barrier Rectifier
1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40 V Forward Current - 1 A PINNING PIN 1 2 1 DESCRIP.
Jingdao Microelectronics
1N5817WS - SCHOTTKY BARRIER RECTIFIERS
Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec.
WON-TOP
1N5817 - 1.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power L.
Sangdest Microelectronics
1N5817W - SCHOTTKY BARRIER DIODE
Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard.
Rectron
1N5817W - SCHOTTKY BARRIER RECTIFIER
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere Features • Metal silicon junction, majority carrier conduction • Guarding f.
BLUE ROCKET ELECTRONICS
1N5817W - Schottky Barrier Rectifiers
1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L.
International Rectifier
1N5817 - SCHOTTKY RECTIFIER
SCHOTTKY RECTIFIER Bulletin PD-20646 rev. C 11/04 1N5817 1.0 Amp Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangula.
Fairchild Semiconductor
1N5817 - Schottky Barrier Rectifier
1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C wi.
PAN JIT
1N5817 - SCHOTTKY BARRIER RECTIFIERS
1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT 1 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabilit.
AiT Components
1N5817 - SCHOTTKY DIODES
AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are.
Kexin
1N5817 - Schottky Barrier Rectifier Diodes
SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C.
NTE
1N5817 - Schottky Barrier Rectifier
1N5817, 1N5818, 1N5819 Schottky Barrier Rectifier DO−41 Type Package Absolute Maximum Ratings: Maximum Repetitive Reverse 1N5817 . . . . . . . . . . .
Comchip
1N5817-G - Schottky Barrier Rectifiers
Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junc.
