1N5817

Schottky barrier diodes

NXP

1N5817 Features

* Low switching losses

* Fast recovery time

* Guard ring protected

* Hermetically sealed leaded glass package. APPLICATIONS

* Low power, switched-mode power supplies

* Rectifying

* Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N581

1N5817 General Description

The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03.

1N5817 Datasheet (37.44 KB)

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Datasheet Details

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1N5817

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NXP ↗

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37.44 KB

Description:

Schottky barrier diodes.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product speciﬁcation Supersedes data of April 1992 .

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1N5817 Schottky barrier diodes NXP

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1N5817 Features

1N5817 General Description

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