1S20 Datasheet | Specifications & PDF Download

1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C =

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1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Sho

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES *

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1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.5pF max) • Sho

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP2

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1S2076A PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * H

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2:2 Differential-to-HCSL Multiplexer with Low Input Level Alarm ICS851S201I Datasheet Description The ICS851S201I is a high-performance 2-input, 2-o

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1S2076A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0560-0300 (Previous: ADE-208-146B) Rev.3.00 Mar 16, 2005 Features • Low capacita

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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS December 2001 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER

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1S2076A Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-146A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C

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ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio

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2:2 Differential-to-HCSL Multiplexer with Low Input Level Alarm ICS851S201I Datasheet Description The ICS851S201I is a high-performance 2-input, 2-o

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HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS January 1997 40A, 600V, Rugged UFS Series N-Channel IGBTs Featu

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1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Sho

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1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.5pF max) • Sho

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1S20 THRU 1S200  RoHS COMPLIANT   Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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