1S20 Datasheet | Specifications & PDF Download

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS January 1997 40A, 600V, Rugged UFS Series N-Channel IGBTs Featu

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ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio

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1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C =

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Resistors SIL Resistor Network L Series Thick Film Low Profile SIP Conformal Coated Resistor Networks RoHS Compliant Electrical Standard Res

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1S20 THRU

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GA1A1S201WP GA1A1S201WP www.datasheet4u.com Surface-mount Package OPIC™ Logarithmic Output Ambient Light Sensor ■ Description The GA1A1S201WP is an

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ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio

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Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining t

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1S2076A PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * H

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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Resistors SIL Resistor Network L Series Thick Film Low Profile SIP Conformal Coated Resistor Networks RoHS Compliant Electrical Standard Res

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www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www

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ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio

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POSSOIBBLSEOHSLGUETBTGTSEM2TP0ITNRU6OT0DECDU3PaCtRTaOSDhUeCeTt HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS June 2000 File Number 4226.2 [ /Title (HGT

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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS December 2001 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER

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ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio

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1S2076 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0559-0300 (Previous: ADE-208-145B) Rev.3.00 Mar 16, 2005 Features • Low capacitan

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HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP2

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1S2076A Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-146A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C

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