RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S2.
Fairchild Semiconductor
HGT1S20N60B3S - N-Channel IGBT
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP2.
Formosa MS
1S20 - 1.0 AMP SCHOTTKY BARRIER RECTIFIERS
1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi.
Micro Commercial Components
1S20 - 1.0 Amp Schottky Barrier Rectifier
MCC Features • • • • • omponents 21201 Itasca Street Chatsworth # $ % # 1S20 THRU .
Hitachi Semiconductor
1S2074 - Silicon Epitaxial Planar Diode
1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Sho.
Yangzhou Yangjie
1S20 - Schottky Barrier Rectifier
1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr.
KD
1S20 - SCHOTTKY BARRIER RECTIFIER
1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under.
EIC
1S20 - SCHOTTKY BARRIER RECTIFIER DIODES
Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :.
Sharp
GA1A1S201WP - Surface Mount Package OPIC Logarithmic Output Ambient Light Sensor
GA1A1S201WP GA1A1S201WP www.datasheet4u.com Surface-mount Package OPIC™ Logarithmic Output Ambient Light Sensor ■ Description The GA1A1S201WP is an.
Renesas
1S2076A - Silicon Epitaxial Planar Diode
1S2076A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0560-0300 (Previous: ADE-208-146B) Rev.3.00 Mar 16, 2005 Features • Low capacita.
Rectron Semiconductor
1S20 - SCHOTTKY BARRIER RECTIFIER
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * .
Hitachi Semiconductor
1S2074H - Silicon Diode
1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Sho.
Hitachi Semiconductor
1S2075 - Silicon Diode
1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.5pF max) • Sho.
Hitachi Semiconductor
1S2076A - Silicon Diode
1S2076A Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-146A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C .
Yangzhou Yangjie
1S200 - Schottky Barrier Rectifier
1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr.
Microsemi Corporation
APT2X61S20J - HIGH VOLTAGE SCHOTTKY DIODES
2 2 3 3 4 1 1 4 Parallel S ISOTOP fi OT 22 7 APT2X61S20J APT2X61S20J 200V 75A UL Recognized file # E145592 DUAL DIE ISOTOP® PACKAGE HIGH .
COSMO Electronics
KW1S20FC - Photo Interrupter
www.DataSheet4U.com www.DataSheet4U.com .
CTC
HH-1S2012-5R0xx - CHIP FERRITE - BEADS
ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio.
CTC
HH-1S2012-8R0xx - CHIP FERRITE - BEADS
ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio.
CTC
HH-1S2012-121xx - CHIP FERRITE - BEADS
ITEM PAGE 2/35 CHIP FERRITE - BEADS Features 1. Effective for suppressing noise at high frequencies 2. Suited for preventing the abnormal oscillatio.
