1S50 Datasheet | Specifications & PDF Download

GP1S50/GP1S51V/GP1S52V/GP1S54 GP1S50/GP1S51V GP1S52V/GP1S54 s Features 1. High sensing accuracy ( Slilt width : 0.5mm ) 2. Both-sides mounting type :

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W561XXX Data Sheet 4-TRACK PCM-MELODY WITH VOICE SYNTHESIZER (BandDirectorTM Series) Table of Contents1. 2. 3. 4. 5. GENERAL DESCRIPTION

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Wire Wound Chip Balun Transformer – BW Series Operating Temp. : -40℃ ~+ 85℃ FEATURES ● Winding structure and small size ● Surface mount type ● Low in

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1S20 THRU

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1S20 THRU 1S200  RoHS COMPLIANT   Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Cha

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MF1S5009 Mainstream contactless smart card IC for fast and easy solution development Rev. 3 — 27 July 2010 189131 Product data sheet PUBLIC 1. Gen

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75 dB High Isolation SP4T PIN Diode Switch 6 GHz to 12 GHz, 2.5 dB Insertion Loss with SMA TECHNICAL DATA SHEET PE71S5004 Pasternack model PE71S5004

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SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features

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90 dB High Isolation SPDT PIN Diode Switch 1 GHz to 2 GHz, 1 dB Insertion Loss with SMA TECHNICAL DATA SHEET PE71S5002 Pasternack model PE71S5002 i

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RF1S50N06SM-VB RF1S50N06SM-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Con

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1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES *

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured u

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SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features

Rating: 1 ★ (2 votes)

80 dB High Isolation SP4T PIN Diode Switch 2 GHz to 6 GHz, 1.8 dB Insertion Loss with SMA TECHNICAL DATA SHEET PE71S5003 Pasternack model PE71S5003

Rating: 1 ★ (2 votes)