1SS133 Datasheet | Specifications & PDF Download

1SS133 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Fre

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1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching A

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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Small Signal Product 1SS133M Taiwan Semiconductor 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device (trr < 4.0 ns)

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Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar Switching Diode ABA C D Catho

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Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133S Silicon Epitaxial Planar Switching Diode ABA C D Cath

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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