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1SS294 Matched Datasheet

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No Part Number Description Manufacture PDF
1 1SS294 DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) :
Toshiba Semiconductor
Toshiba Semiconductor
1SS294 pdf






1SS29 Similar Datasheet

Part Number Description Manufacture PDF
1SS294 DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) :
Toshiba Semiconductor
Toshiba Semiconductor
1SS294 datasheet
1SS293 DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) :
Toshiba Semiconductor
Toshiba Semiconductor
1SS293 datasheet
1SS295 DIODE (UHF BAND MIXER APPLICATIONS)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) :
Toshiba Semiconductor
Toshiba Semiconductor
1SS295 datasheet


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