| Part Number |
Description |
Manufacture |
PDF |
|
1SS294 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage z Low reverse surrent z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : |
Toshiba Semiconductor
|
|
|
1SS293 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage z Low reverse surrent z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : |
Toshiba Semiconductor
|
|
|
1SS295 |
DIODE (UHF BAND MIXER APPLICATIONS)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage z Low reverse surrent z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : |
Toshiba Semiconductor
|
|
