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6MBP300VEA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP300VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 300A / IPM Features • Temperature.FQP5N30 - 300V N-Channel MOSFET
QFET % % % % % % & '( )**+ , - * .Ω /+ - 0* + 1 2 . 3 4 1 2 . &.12N30 - 12A 300V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The U TC 12N30 is an N-ch annel mod e p.MUR6030NCA - 60A 300V Fast recovery diode
60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv.FQAF14N30 - 300V N-Channel MOSFET
QFET % % % % % % && '( )**+ , - * ./Ω 0+ - &* + 1 2 )* .FQA22N30 - 300V N-Channel MOSFET
QFET % % % % % % &&' ())* + , ) -.Ω /* , -) * 0 1 23 4 0 1 2).FQA38N30 - 300V N-Channel MOSFET
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,.FQA38N40 - 300V N-Channel MOSFET
QFET % % % % % % &' () &**+ , - * *'.Ω /+ - 0* + 1 2 3* 4 1 2 .FQA44N30 - 300V N-Channel MOSFET
QFET % % % % % % &' () '**+ , - * *./Ω 0+ - 1* + 2 3 14* 5 2 3 .FQP22N30 - 300V N-Channel MOSFET
QFET % % % % % % &'( )**+ , - * '.Ω /+ - '* + 0 1 23 4 0 1 2*.STP12NK30Z - N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET
STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP12NK30Z s s s s s s s VDSS 300 V RDS(on) < 0.4 Ω ID .FZT957 - 300V PNP MEDIUM POWER TRANSISTOR
Features BVCEO > -300V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current Low Saturation Voltage VCE(sat) < -240mV @ -1A .STTH2003CT - 300V ultrafast rectifier
STTH2003 Datasheet 300 V ultrafast rectifier A1 K A2 K A2 A1 K TO-220AB K A2 K A1 TO-220FPAB A2 A1 K I2PAK K K A2 A1 D2PAK A2 A1 Product stat.NP12N30G - 300V N-Channel Enhancement Mode MOSFET
NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS.SVF31N30CS - 300V N-channel enhanced mode field-effect transistor
SVF31N30CS 31A, 300V N SVF31N30CS N MOS F-CellTM VDMOS 。 、 。 AC-DC ,DC-DC , H PWM 。 31A,300V,RDS(on)(typ.)=90m@VGS=10V .