2-300V Datasheet | Specifications & PDF Download

60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5

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7A, 300V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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Product specifications Product Application: ● Switch mode Power Supply ● Welder ● Free Wheeling Diode ● Motor Controllers ● Converters ● Inverters ● S

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Description V X / Mob:15919711751 ASC20N3300MT4 3300V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package Features High speed swi

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Airflow Sensors Microbridge Mass Airflow/Amplified Figure 1 Heater control circuit FEATURES ɀ Laser trimmed for improved sensor interchangeability ɀ

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AD5300T 300V 5A Ultra Low VF Schottky Characteristics Summary Characteristics IF(AV) Values 5 VRRM VF @ 2.5A, TJ = 25℃ TJ, Operating Junction Tem

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NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS

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Type CGS High-Cap Screw Terminal Aluminum Electrolytic Capacitor High CV, Screw Terminal Capacitors Type CGS screw terminal, aluminum electrolytic cap

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www.DataSheet4U.com KMX Series MINIATURE -105؇ C Ⅲ Miniature Ⅲ Low Impedance Ⅲ Long Life Ⅲ For Electronic Ballasts Ⅲ‫؀‬ 105؇C Maximum Temperature D

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VJ-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 300A / 2 in one package Features

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STTH2003 Datasheet 300 V ultrafast rectifier A1 K A2 K A2 A1 K TO-220AB K A2 K A1 TO-220FPAB A2 A1 K I2PAK K K A2 A1 D2PAK A2 A1 Product stat

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Features  BVCEO > 300V  Ideal for Medium Power Amplification and Switching  Complementary PNP Type: MMBTA92  Totally Lead-Free & Fully RoHS Compli

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www.DataSheet4U.com FGA120N30D 300V PDP IGBT June 2006 FGA120N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa

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UNISONIC TECHNOLOGIES CO., LTD 05N30 0.5A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 05N30 is a N-channel mode power MOSFET using UTC’s advanc

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FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,

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GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 300A / 2 in one package Features

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