2-Gb Datasheet | Specifications & PDF Download

CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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GN25L95 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring Main Features • 100 mA bias curre

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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200ball FBGA Specification 4GB LPDDR4/LPDDR4X This document is a general product description and is subject to change without notice. SK hynix does no

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