.
ETC
266
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Sanken Electric
155
STR-W6252D - 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators
STR-W6252D www.DataSheet4U.com 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators Features and Benefits ▪ Overcurrent protection (OCP) .
IXYS
96
30N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
Infineon
86
K30H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingse.
ROUM
40
MUR6030NCA - 60A 300V Fast recovery diode
60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv.
Digitron Semiconductors
36
MUR6030 - 60A ULTRA FAST RECOVERY RECTIFIERS
MUR6020-MUR6040 High-reliability discrete products and engineering services since 1977 60A ULTRA FAST RECOVERY RECTIFIERS FEATURES: Available as .
Fairchild Semiconductor
33
F60UP30DN - FFAF60UP30DN
www.DataSheet.co.kr FFA60UP30DN Ultrafast Recovery Power Rectifier FFA60UP30DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Rec.
Infineon Technologies
33
K30T60 - IKW30N60T
IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon
33
H30R1602 - IHW30N160R2
IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode wi.
CR Micro
33
CRMM4606CB - 30V Complementary Power MOSFET
() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch a.
Matsuki
31
ME60N03 - 30V N-Channel Enhancement Mode MOSFET
ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), [email protected],Ids@20A =13mΩ FEATURES Advanced trench proce.
Alpha & Omega Semiconductors
27
AON4605 - 30V Complementary MOSFET
AON4605 30V Complementary MOSFET General Description The AON4605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Th.
Mosel Vitelic
26
MSS1807 - (MSS1807 / MSS1507 / MSS1207 / MSS0907 / MSS0607 / MSS0307) 3/ 6/ 9/ 12 / 15 / 18 VOICE ROM
MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM September 1996 Features Single power supply can opera.
NCE Power Semiconductor
26
NCE30TD60BP - Trench FS II Fast IGBT
600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology.
Infineon
25
G30H603 - IGBT
IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGP30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerContr.
Chipown
24
AP2960 - 30V 3.0A Synchronous CV/CC Step-Down Converter
AP2960 Chipown 30V 3.0A Synchronous CV/CC Step-Down Converter General Description AP2960 is a wide input voltage, high efficiency Synchronous CC/CV.
HTC
23
TJ4306 - 600mA Ultra Low Dropout Linear Regulator
600mA Ultra Low Dropout Linear Regulator TJ4306 FEATURES • Ultra-Low Dropout Voltage • Compatible with low ESR MLCC as Input/ Output Capacitor • Goo.
UMW
23
30N06 - 60V N-Channel Enhancement Mode Power MOSFET
UMW R UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW 30N06 General Description The 30N06 uses advanced trench technology and design to pr.
CR Micro
23
CRMM6602C - 30V Complementary Power MOSFET
() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch a.
Microsemi
22
NX2114 - 300kHz & 600kHz SYNCHRONOUS PWM CONTROLLER
Evaluation board available. NX2114/2114A 300kHz & 600kHz SYNCHRONOUS PWM CONTROLLER PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION FEATURES .