2.30-2.60 Datasheet | Specifications & PDF Download

TPP60308 60-V 3.5-A Step-Down DC/DC Converter Features • High Efficiency at Light Loads with Pulse Skipping • 80-mΩ High-Side MOSFET • 160-μA Operat

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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STR-W6252D www.DataSheet4U.com 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators Features and Benefits ▪ Overcurrent protection (OCP)

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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AP2960 Chipown 30V 3.0A Synchronous CV/CC Step-Down Converter General Description AP2960 is a wide input voltage, high efficiency Synchronous CC/CV

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode wi

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SPECIFICATION Device Name Type Name : Power Integrated Module (RoHS compliant product) : 7MBR30SA060-50 Spec. No. : MS6M 0868 Apr. 26 ‘05 K.Murama

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www.DataSheet.co.kr FFA60UP30DN Ultrafast Recovery Power Rectifier FFA60UP30DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Rec

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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AO4606 30V Complementary MOSFET General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate char

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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CRM60GH30E4 () 600V 30A 3-phase Integrated Power Modules Description CRM60GH30E4 are 3-phase Integrated Power Modules (IPM) designed for advanced

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MUR6020-MUR6040 High-reliability discrete products and engineering services since 1977 60A ULTRA FAST RECOVERY RECTIFIERS FEATURES:  Available as

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GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation I

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Product Specification CUSTOMER DATE OF ISSUE Toshiba 2013.04.30 MODEL NO. LTN156AT30 EXTENSION CODE -601 Approved by Y.E.PARK 13/04/30 Prepar

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TO-247 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 (2-lead TO247

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