2.856 Datasheet | Specifications & PDF Download

DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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AT8563 —— I2C / ： AT8563DS001V2.3 ： 2014-01-18 1

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UZ5706 SERIES UZ5806 SERIES High-reliability discrete products and engineering services since 1977 5 WATT ZENER DIODES FEATURES  Available as “HR”

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FEATURES: • High-density 256K (32K x 8) bit CMOS static RAM module • Equivalent to JEDEC standard for future monolithic 32K x 8 static RAMs • High-spe

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DATA SHEET LASER DIODE NX8562LB 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION The NX8562LB is a 1 550 nm laser d

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DATA SHEET LASER DIODE NX8562LB 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION The NX8562LB is a 1 550 nm laser d

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www.DataSheet.co.kr Ordering number : ENA0119A LC863864B, LC863856B LC863848B, LC863840B LC863832B, LC863828B LC863824B, LC863820B LC863816B Overvie

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SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Featu

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose sAbsolute maximum rating

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GPD2856 , preliminary GPD2856 User’s Manual Preliminary Version 0.2 2013 09 23 Room17A, BuildingA,Huaqiang Plaza,Huaqiang North Road,Futian Distr

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EM8569 HV Start-up Green-mode PWM Converter with Brown-Out Protection General Description EM8569 is a high performance, low cost, HV Start-up, curren

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UZ7706 SERIES UZ7806 SERIES High-reliability discrete products and engineering services since 1977 6 WATT ZENER DIODES FEATURES  Available as “HR”

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FEATURES: • High-density 256K (32K x 8-bit) CMOS static RAM module • Equivalent to JEOEC standard for future monolithic 32K x 8 static RAMs • High-spe

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