20-45 Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 20S45 * ： DC-DC * ： ， A1. K. A2. ：( Ta=25

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RS-445PA/PD OUTPUT : 3.0W~55W (APPROX) Typical Applications Office Automation Equipment : Printer Carbon-brush motors WEIGHT : 127g (APPROX) VOLTAGE

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EUP3453 3A,40V,200KHz Step-Down Converter DESCRIPTION The EUP3453 is current mode, step-down switching regulator capable of driving 3A continuous load

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Integrated Driver and MOSFET NCP302045 Description The NCP302045 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a single pack

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A200 D90 A100 D90 A100 D45 14 12 No. T50 T040 075 220 T50 T040W 075W 220W M.S S100 S100W 100 400 100W 400W M.S A200 D90 A100 D45 14 12 6 A100 D90

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STPS2045C A1 K A2 K A2 K A1 TO-220AB K A2 K A1 TO-220FPAB K A2 A1 D²PAK A2 A1 Features  Very small conduction losses  Negligible switching los

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® STPS2045CT/CF/CG POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION L

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Date:- 20 April, 2020 Data Sheet Issue:- 4 Insulated Gate Bi-Polar Transistor Type T2000BB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE

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Specification: CU20045-KTW228A VFD Module Features: 20x4 Character Module 5mm High Characters Single 5V Supply High Brightness Blue Green Display O

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SBD20C45T/F_Datasheet 20A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD20C45T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G

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MBR2045 PRV : 45 Volts IO : 20 Amperes FEATURES : * High current capability * Low forward voltage drop * High surge capacity * Low power loss, High ef

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WBA0520-45A 0.5- 2.0 GHz LOW NOISE WIDE BAND AMPLIFIER REV B January 2010 Key Features Product Description Applications • 0.5 ~ 2.0 GHz • 0.50 dB

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2MBI450VX-120-50 Power Module (V series) 1200V / 450A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solderless press-fit te

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2MBI450XHA120-50 Power Module (X series) 1200V / 450A / 2-in-1 package Features Low V CE(sat) High speed switching Low Inductance Module structure

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6MBI450U-120 IGBT Module U-Series 1200V / 450A 6 in one-package Features · High speed switching · Voltage drive · Low inductance module structure A

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    N-channel Enhancement Mode MOSFET     DESCRIPTION    The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  g

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bq20z45 www.ti.com

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2MBI450XNA120-50 Power Module (X series) 1200V / 450A / 2-in-1 package ■ Features Low V CE(sat) Low Inductance Module structure Solder pin terminals

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2MBI450XEE120-50 Power Module (X series) 1200V / 450A / 2-in-1 package ■ Features Low V CE(sat) High speed switching Low Inductance Module structure

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