20-85 Datasheet | Specifications & PDF Download

DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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GE Sensing Features • Low cost solid state sensor • Resistance tolerances down to ±2% • High sensitivity to changes in temperature • Suitable for temp

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BAT854CW 40 V, 200 mA Schottky barrier dual diode 4 January 2023 Product data sheet 1. General description Planar Schottky barrier dual diode with a

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ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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Preliminary_V0.00 JD9853 JD9853 Data Sheet 240RGB x 320 dot, 262K color, with internal GRAM, a-Si TFT LCD Single Chip Driver Preliminary Version 0.0

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RMPA2265 December 2004 RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description The RMPA2265 power

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e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation f

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Metal-Oxide Varistors (MOVs) Radial Lead Varistors > TMOV® and iTMOV® Varistor Series TMOV® and iTMOV® Varistor Series RoHS Agency Approvals Agenc

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Metal-Oxide Varistors (MOVs) Radial Lead Varistors > TMOV® and iTMOV® Varistor Series TMOV® and iTMOV® Varistor Series RoHS Agency Approvals Agenc

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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UltraMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Lead Varistors > UltraMOV® Varistor Series RoHS Agency Approvals Agency Agency Appro

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www.DataSheet4U.com

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www.DataSheet4U.com

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Sat

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Data Sheet AD4856 Buffered, 8-Channel Simultaneous Sampling, 20-Bit 250 kSPS DAS FEATURES ► Complete 20-bit data acquisition system ► Simultaneous sa

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a Stereo, Single Supply 16-, 18- and 20-Bit Sigma-Delta DACs AD1857/AD1858 PRODUCT OVERVIEW FEATURES Low Cost, High Performance Stereo DACs 128 Time

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