20.0-40.0 Datasheet | Specifications & PDF Download

ESMT AD82583 2x20W Stereo / 1x40W Mono Class-D Audio Amplifier With Power Limit Control Features Single supply voltage 4.5 ~ 26V for loudspeaker dr

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OC5820 MOSFET 。OC5820 6-40V 2.5 A ， 。 OC5820 PWM ， 。 OC5820 FS ， 。 OC5820 。 OC5820 ESOP8 ， 。 OC5820 2.5A，40V  2.5A  40V/3A MOSFET  93

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Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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ESMT/EMP Features Preliminary AD82587D 2X20W Stereo / 1X40W Mono Digital Audio Amplifier z Anti-pop design z 16/18/20/24-bit input with I2S, Left-a

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Pressure Sensor MPS20N0040D-S   This datasheet is provided by: e-radionica.com support@e-radionica.com https://e-radionica.com/en/air-pressure-senso

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TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

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Preliminary_V0.00 JD9853 JD9853 Data Sheet 240RGB x 320 dot, 262K color, with internal GRAM, a-Si TFT LCD Single Chip Driver Preliminary Version 0.0

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Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app

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® TDA7240A 20W BRIDGE AMPLIFIER FOR CAR RADIO . . . . . . . . COMPACT HEPTAWATT PACKAGE FEW EXTERNAL COMPONENTS OUTPUT PROTECTED AGAINST SHORT CIRC

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PCB relays Twin relays Double micro power relay K Catalog 1308028 Issued 01-05 Powertrain Systems Chassis Systems Safety Security Body Driver I

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PCB Relays Twin Relays Double Mini Relay DMR Catalog 1308028 Revision 03-06 Revision 03-05 Description Features - Two separate systems - Lamp applic

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic

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IGF40T120F General Description： Using advanced IGBT technology, the IGBT offers superior conduction and switching performances,high avalanche ruggedn

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History of Version Date 2006/9/4 Ver. 0 Description Mass Production Page - Design by Danny Total : 25 Page PH320240T-005-I-Q Ver. 0 Page2 Con

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DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit

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PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio s Imaging Conditions Object i

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