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G20N60B3D Datasheet - Fairchild

G20N60B3D - 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

G20N60B3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The

G20N60B3D_Fairchild.pdf

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Datasheet Details

Part number:

G20N60B3D

Manufacturer:

Fairchild

File Size:

179.53 KB

Description:

40a / 600v / ufs series n-channel igbt with anti-parallel hyperfast diode.

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