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HGTG20N60B3D
Data Sheet December 2001
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016.
Features
• 40A, 600V at TC = 25oC • Typical Fall Time. . . . . . . . . . . . . . . . . . . .
G20N60B3D Datasheet
