* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
G20N60C3 Datasheet (169.17 KB)
G20N60C3
Fairchild Semiconductor
169.17 KB
N-channel igbt.
Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switchin.
📁 Related Datasheet
G20N60C3D N-Channel IGBT (Intersil Corporation)
G20N60B3 N-Channel IGBT (Intersil Corporation)
G20N60B3D 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild)
IRFP3006PBF High Speed IGBT (Infineon)
G20N100D2 HGTG20N100D2 (Intersil Corporation)
G20N120 HGTG20N120 (ETC)
G20N50C Power MOSFET (Vishay)
G20-40i Rectifier (AEG)
G200 Axial Vitreous Leaded Wirewound Resistors (Vishay)
G2000HF250 Anode Shorted Gate Turn-Off Thyristor (IXYS)
