of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o
✔ G20N60C3 Application
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor contro
G20N60C3D - N-Channel IGBT
(Intersil Corporation)
HGTG20N60C3D
Data Sheet January 2000 File Number 4494.2
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a.
G20N60B3 - N-Channel IGBT
(Intersil Corporation)
.
G20N60B3D - 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
(Fairchild)
HGTG20N60B3D
Data Sheet December 2001
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high vo.
IRFP3006PBF - High Speed IGBT
(Infineon)
IRFP3006PbF
60V 2.1m 2.5m
270A 195A
G
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
D
D G
S
S
TO-247AC
Application.
G20N100D2 - HGTG20N100D2
(Intersil Corporation)
HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
• 34A, 1000V • Latch Free Operation • Typ.
G20N120 - HGTG20N120
(ETC)
Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High I.
G20N50C - Power MOSFET
(Vishay)
.vishay.
SiHG20N50C
Vishay Siliconix
Power MOSFET
D TO-247
S
D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg m.
G20-40i - Rectifier
(AEG)
.
G200 - Axial Vitreous Leaded Wirewound Resistors
(Vishay)
.
G2000HF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 13 August, 2011 Data Sheet Issue:- A1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor Types G2000HF250
Absol.
