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G20N60HS - High Speed IGBT

G20N60HS Description

  IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ.max.ID (Silicon Limited) ID (Package Limited)     D D G S S TO-247AC Application.

G20N60HS Features

* 2 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 400 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 170A 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1

G20N60HS Applications

* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits Benefits
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA

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High Speed IGBT Infineon
Infineon G20N60HS-like datasheet