* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti
G20N60C3D Datasheet (81.19 KB)
G20N60C3D
Intersil Corporation
81.19 KB
N-channel igbt.
HGTG20N60C3D
Data Sheet January 2000 File Number 4494.2
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a.
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D
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.vishay.
SiHG20N50C
Vishay Siliconix
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D TO-247
S
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G
S N-Channel MOSFET
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VDS (V) at TJ max. RDS(on) (Ω) Qg m.
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