Part number:
G20N60C3D
Manufacturer:
Intersil Corporation
File Size:
81.19 KB
Description:
N-channel igbt.
G20N60C3D Datasheet (81.19 KB)
Datasheet Details
G20N60C3D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti
G20N60C3D Datasheet (81.19 KB)
Datasheet Details
G20N60C3D
Intersil Corporation
81.19 KB
N-channel igbt.
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