2012E Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope

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www.DataSheet4U.com 2.0x1.2mm SMD CHIP LED LAMP AP2012EC HIGH EFFICIENCY RED Features 2.0mmx1.2mm SMT LED, 1.1mm THICKNESS. LOW POWER CONSUMPTION.

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ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.1

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INDUCTORS October 2017 Inductors for power circuits Wound ferrite VLS-E-CA series (For automobiles) VLS2012E-CA type VLS2012E-CA Caution INDUCTORS RE

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INDUCTORS October 2017 Inductors for power circuits Wound ferrite VLS-E-CA series (For automobiles) VLS252012E-CA type VLS252012E-CA Caution INDUCTOR

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EMC Components Common mode filters For high-speed differential signal line, general differential signal line ACM-E series RoHS Cl Br REACH Halogen S

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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low. : VCE(sat)ᴪ-250mV at

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www.DataSheet4U.com Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Id

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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R F C o m p o n e n t s July 2013 Balun Transformers Wound SMD ATB series ATB2012-50011 (2.0u1.2u1.2mm) ATB2012-75011 (2.0u1.2u1.2mm) ATB2012E-5001

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2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012EC High Efficiency Red Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The High Ef

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APT2012EC 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTION The High Efficiency Red source color devices are Made with Gallium Arsenide Phosphide on Gallium

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2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012EC High Efficiency Red Features z 2.0mm x1.25mm SMT LED,0.75mm thickness. z Low power consumption

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