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MX2012E - Dual N-Channel Enhancement Mode Power MOSFET

MX2012E Description

Dual N-Channel Enhancement Mode Power MOSFET MX2012E .
The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

MX2012E Features

* VDS=20V, ID=8A RDS(ON)(Typ. )=8.5mΩ @ VGS=4.5V RDS(ON)(Typ. )=10mΩ @ VGS=2.5V
* Surface-mounted package
* Advanced trench cell design
* Extremely low threshold voltage

📥 Download Datasheet

Preview of MX2012E PDF
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Datasheet Details

Part number
MX2012E
Manufacturer
imosemi
File Size
449.02 KB
Datasheet
MX2012E-imosemi.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET imosemi
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