MX2012E Dual N-Channel Enhancement Mode Power MOSFET

Description

Dual N-Channel Enhancement Mode Power MOSFET MX2012E .
The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: MX2012E
Manufacturer: imosemi
File Size: 449.02 KB
Datasheet: MX2012E-imosemi.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS=20V, ID=8A RDS(ON)(Typ. )=8.5mΩ @ VGS=4.5V RDS(ON)(Typ. )=10mΩ @ VGS=2.5V
* Surface-mounted package
* Advanced trench cell design
* Extremely low threshold voltage

MX2012E Distributors

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MX2012E Dual N-Channel Enhancement Mode Power MOSFET imosemi

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