MX2012E Datasheet - imosemi

MX2012E - Dual N-Channel Enhancement Mode Power MOSFET

MX2012E Features

* VDS=20V, ID=8A RDS(ON)(Typ.)=8.5mΩ @ VGS=4.5V RDS(ON)(Typ.)=10mΩ @ VGS=2.5V

* Surface-mounted package

* Advanced trench cell design

* Extremely low threshold voltage

* ESD protected (HBM>2KV) APPLICATION

* Portable appliances

* Battery management PINOUT Schematic dia

Datasheet Details

MX2012E

imosemi

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Dual n-channel enhancement mode power mosfet.

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