20N15 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N15 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Stat

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Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDS

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PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS

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MTP20N15E Power MOSFET 20 Amps, 150 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation mo

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UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it use

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PolarTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK220N15P IXFX220N15P VDSS ID25 RDS(on) trr

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N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using

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Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDS

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PolarTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK220N15P IXFX220N15P VDSS ID25 RDS(on) trr

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IQE220N15NM5SC MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Superior thermal resistance • 100% avalanche tested •

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High Voltage Power MOSFETs w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol VDSS VDGR VGSS

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N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using

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AP20N15GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ R

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N-Channel Super Trench Power MOSFET Description The HMS20N15KA uses Super Trench technology that is uniquely optimized to provide the most efficient h

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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BSC520N15NS3 G MOSFET OptiMOSª 3 Power-Transistor, 150 V Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge

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XP20N15GH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Character

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High Voltage Power MOSFETs w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol VDSS VDGR VGSS

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RU120N15R N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and G

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METAL OXIDE VARISTOR 20mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Clamping Su

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