20N15 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N15 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Stat

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UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it use

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TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D

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BSC520N15NS3 G MOSFET OptiMOSª 3 Power-Transistor, 150 V Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge

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Advanced Power Electronics Corp. AP20N15GH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switchin

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MTP20N15E Power MOSFET 20 Amps, 150 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation mo

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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BSC520N15NS3 G MOSFET OptiMOSª 3 Power-Transistor, 150 V Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge

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N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using

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RU120N15R N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and G

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PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS

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PolarTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK220N15P IXFX220N15P VDSS ID25 RDS(on) trr

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IQE220N15NM5SC MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Superior thermal resistance • 100% avalanche tested •

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UNISONIC TECHNOLOGIES CO., LTD 20N15V 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC’s advance

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DATA SHEET MOS INTEGRATED CIRCUIT µPD120Nxx Series THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A) DESCRIPTION The µPD1

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Preliminary Data Sheet μPD120Nxx Series R03DS0030EJ0400 Rev.4.00 THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A) Apr

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Analog Power N-Channel 150-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Elektronische Bauelemente SSD20N15 20A, 150V, RDS(ON) 70mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen fr

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CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy in avalanche and commutation modes. Th

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UNISONIC TECHNOLOGIES CO., LTD 20N15-HC 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15-HC is a N-channel enhancement MOSFET using UTC’s

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