21N60 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 21N60 ·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltag

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www.vishay.com SiHA21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET P

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www.vishay.com SiHP21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (

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www.vishay.com SiHH21N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC

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iscN-Channel MOSFET Transistor IRFP21N60L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and des

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www.vishay.com SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (

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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS =

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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS =

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GENERAL DESCRIPTION GPT21N60 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced

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HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and des

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www.vishay.com SiHG21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode S

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhan

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