INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Inchange Semiconductor
21N60 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 21N60 ·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltag.
Vishay
SiHB21N60EF - Power MOSFET
www.vishay.com SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
Vishay
SiHP21N60EF - Power MOSFET
www.vishay.com SiHP21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
Vishay
SiHA21N60EF - Power MOSFET
www.vishay.com SiHA21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET P.
Vishay
SiHH21N60E - E Series Power MOSFET
www.vishay.com SiHH21N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC.
Vishay
SiHG21N60EF - Power MOSFET
www.vishay.com SiHG21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
INCHANGE
IRFP21N60L - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFP21N60L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS .
Motorola
MGP21N60E - Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si.
Motorola
MGW21N60ED - Insulated Gate Bipolar Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhan.
ON
MGW21N60ED - Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode S.
IXYS Corporation
IXFH21N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .
Vishay Siliconix
SiHFP21N60L - Power MOSFET
IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = .
IXYS Corporation
21N60 - IXFH21N60
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
Greatpower
GPT21N60 - POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION GPT21N60 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced.
Vishay
IRFP21N60L - Power MOSFET
IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = .
H&M Semiconductor
HMS21N60F - N-Channel Super Junction Power MOSFET
HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and des.
H&M Semiconductor
HMS21N60 - N-Channel Super Junction Power MOSFET
HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and des.
