24N06 Datasheet | Specifications & PDF Download

NTD24N06L, STD24N06L MOSFET – Power, N-Channel, Logic Level, DPAK 24 A, 60 V Designed for low voltage, high speed switching applications in power su

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MOSFET – Power, Dual N-Channel, SO-8FL 60 V, 22.6 mW, 24 A NVMFD024N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Mini

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MOSFET – Power, Dual N-Channel, DUAL SO8-FL 60 V, 22.6 mW, 24 A NTMFD024N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) t

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga

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NTD24N06 MOSFET – Power, N-Channel, DPAK/IPAK 60 V, 24 A Designed for low voltage, high speed switching applications in power supplies, converters an

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NTD24N06 Power MOSFET 60 Volt, 24 Amp N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and pow

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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MOSFET – Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NTTFS024N06C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to

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CRSM024N06L2Z SkyMOS2 N-MOSFET 60V, 2.4mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent

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NTD24N06L, STD24N06L MOSFET – Power, N-Channel, Logic Level, DPAK 24 A, 60 V Designed for low voltage, high speed switching applications in power su

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FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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HGN024N06SL Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP024N06N3，IIPP024N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.1mΩ ·Enhanc

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XP224N0601TR-G N-channel MOSFET 20V, 0.6A ETR11072-001a ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.7Ω@VGS =

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XP224N06013R-G N-channel MOSFET 20V, 0.6A ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.7Ω@VGS =4.5V : 1.8V :

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CRSM024N06L2 SkyMOS2 N-MOSFET 60V, 2.4mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent Q

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