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KU024N06P N-ch Trench MOS FET

KU024N06P Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KU024N06P Features

* VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max. ) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche En

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Datasheet Details

Part number
KU024N06P
Manufacturer
KEC
File Size
1.05 MB
Datasheet
KU024N06P_KEC.pdf
Description
N-ch Trench MOS FET

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N-ch Trench MOS FET KEC
KEC KU024N06P-like datasheet