Part number:
KU024N06P
Manufacturer:
KEC
File Size:
1.05 MB
Description:
N-ch trench mos fet.
Datasheet Details
KU024N06P Features
* VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche En
Datasheet Details
KU024N06P
KEC
1.05 MB
N-ch trench mos fet.
📁 Related Datasheet
KU034N08P N-ch Trench MOS FET (KEC)
KU035N06P N-ch Trench MOS FET (KEC)
KU045N10P N-ch Trench MOS FET (KEC)
KU047N08P N-ch Trench MOS FET (KEC)
KU048N03D N-Ch Trench MOSFET (KEC semiconductor)
KU054N03D N-Ch Trench MOSFET (KEC semiconductor)
KU056N03Q N-Ch Trench MOSFET (KEC semiconductor)
KU063N03Q N-channel MOSFET (KEC semiconductor)
KU024N06P Distributor