Part number:
KU086N10F
Manufacturer:
KEC
File Size:
1.24 MB
Description:
N-channel mosfet.
* VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche
KU086N10F
KEC
1.24 MB
N-channel mosfet.
📁 Related Datasheet
KU086N10P N-Channel MOSFET (KEC)
KU024N06P N-ch Trench MOS FET (KEC)
KU034N08P N-ch Trench MOS FET (KEC)
KU035N06P N-ch Trench MOS FET (KEC)
KU045N10P N-ch Trench MOS FET (KEC)
KU047N08P N-ch Trench MOS FET (KEC)
KU048N03D N-Ch Trench MOSFET (KEC semiconductor)
KU054N03D N-Ch Trench MOSFET (KEC semiconductor)
KU056N03Q N-Ch Trench MOSFET (KEC semiconductor)
KU063N03Q N-channel MOSFET (KEC semiconductor)