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KU056N03Q

N-Ch Trench MOSFET

KU056N03Q Features

* VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise no

KU056N03Q Datasheet (90.54 KB)

Preview of KU056N03Q PDF

Datasheet Details

Part number:

KU056N03Q

Manufacturer:

KEC semiconductor

File Size:

90.54 KB

Description:

N-ch trench mosfet.

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KU056N03Q N-Ch Trench MOSFET KEC semiconductor

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