KU056N03Q N-Ch Trench MOSFET

KEC semiconductor

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

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Datasheet Specifications

Part number: KU056N03Q
Manufacturer: KEC semiconductor
File Size: 90.54 KB
Datasheet: KU056N03Q_KECsemiconductor.pdf
Description: N-Ch Trench MOSFET

Features

* VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max. ) @ VGS=10V RDS(ON)=9.7m (Max. ) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise no

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KU056N03Q N-Ch Trench MOSFET KEC semiconductor

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