KU063N03Q N-channel MOSFET

KEC semiconductor

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

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Datasheet Specifications

Part number: KU063N03Q
Manufacturer: KEC semiconductor
File Size: 879.92 KB
Datasheet: KU063N03Q_KECsemiconductor.pdf
Description: N-channel MOSFET

Features

* VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max. ) @ VGS=10V RDS(ON)=10.7m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed Drain Power Diss

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KU063N03Q N-channel MOSFET KEC semiconductor

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