KU063N03Q - N-channel MOSFET

Product Overview

KEC semiconductor

Datasheet Details

Part number	KU063N03Q
Manufacturer	KEC semiconductor
File Size	879.92 KB
Description	N-channel MOSFET
Datasheet	KU063N03Q Datasheet
Additional preview pages of the KU063N03Q datasheet.

Product details

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

Features

VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max. ) @ VGS=10V RDS(ON)=10.7m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

📁 Similar Datasheet

KU024N06P - N-ch Trench MOS FET (KEC)
KU034N08P - N-ch Trench MOS FET (KEC)
KU035N06P - N-ch Trench MOS FET (KEC)
KU045N10P - N-ch Trench MOS FET (KEC)
KU047N08P - N-ch Trench MOS FET (KEC)
KU086N10F - N-Channel MOSFET (KEC)
KU086N10P - N-Channel MOSFET (KEC)

Other Datasheets by KEC semiconductor

KU068N03D - N-Ch Trench MOSFET
KU048N03D - N-Ch Trench MOSFET
KU054N03D - N-Ch Trench MOSFET
KU056N03Q - N-Ch Trench MOSFET

Published: Jul 12, 2010 |