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KU047N08P N-ch Trench MOS FET

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Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number
KU047N08P
Manufacturer
KEC
File Size
429.05 KB
Datasheet
KU047N08P_KEC.pdf
Description
N-ch Trench MOS FET

Features

* VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.7m (Max. ) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3

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