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KU086N10P N-Channel MOSFET

KU086N10P Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristic.

KU086N10P Features

* VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max. ) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche

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Datasheet Details

Part number
KU086N10P
Manufacturer
KEC
File Size
1.24 MB
Datasheet
KU086N10P-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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