KU045N10P Datasheet, fet equivalent, KEC

KU045N10P Features

• Fet VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source

PDF File Details

Part number:

KU045N10P

Manufacturer:

KEC

File Size:

1.68MB

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📄 Datasheet

Description:

N-ch trench mos fet. This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanch

KU045N10P Application

• Applications FEATURES VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RA

TAGS

KU045N10P

KEC

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