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KU045N10P N-ch Trench MOS FET

KU045N10P Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KU045N10P Features

* VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max. ) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche E

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Datasheet Details

Part number
KU045N10P
Manufacturer
KEC
File Size
1.68 MB
Datasheet
KU045N10P_KEC.pdf
Description
N-ch Trench MOS FET

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N-ch Trench MOS FET KEC
KEC KU045N10P-like datasheet