UM61256 (UTRON)
32K x 8-Bit High Speed CMOS SRAM
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HN27C256AG-12 (Hitachi Semiconductor)
32768-word x 8-bit UV Erasable and Programmable ROM
HN27C256AG Series
32768-word × 8-bit UV Erasable and Programmable ROM
Maintenance only
Description
This Hitachi HN27C256AG is a 256-kbit ultraviolet
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25Q256JWEQ (Winbond)
1.8V 256M-BIT SERIAL FLASH MEMORY
W25Q256JW
1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
Publication Release Date: December 08. 2017 - Revision B
W25Q256JW
Table of Contents
1
(6 views)
HY29F400TG55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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M5M44256AL-10 (Mitsubishi)
Fast Page Mode 1M-Bit DRAM
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K6F4016U4G-F (Samsung semiconductor)
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G Family
Preliminary CMwwOwS.DaStaSRheAet4MU.com
Document Title
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision
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PCF85102C-2 (NXP)
256 x 8-bit CMOS EEPROMs
INTEGRATED CIRCUITS
DATA SHEET
PCF85102C-2; PCF85103C-2 256 × 8-bit CMOS EEPROMs with I2C-bus interface
Product specification File under Integrated C
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HB56SW3272ESK (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
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HB56SW3272ESK-5 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
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N82S123 (Philips)
256-bit TTL bipolar PROM
(4 views)
M27W400 (STMicroelectronics)
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W400
4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM
s
2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC
(4 views)
HY62256ALP-I (Hynix Semiconductor)
32Kx8bit CMOS SRAM
Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Description Features The Fully static
(4 views)
K4J55323QF-GC20 (Samsung)
256Mbit GDDR3 SDRAM
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe
(4 views)
LC33832M (Sanyo)
256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
(4 views)
M95128 (ST Microelectronics)
256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock
M95256 M95128
256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock
PRELIMINARY DATA
s s s s
SPI Bus Compatible Serial Interface Supports Positive
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N82S23A (Philips)
256-bit TTL bipolar PROM
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N82S23N (Philips)
256-bit TTL bipolar PROM 32 x 8
(4 views)
AM2857 (AMD)
(AM2855 - AM2857) Quad 128-Bit / Dual 256-Bit and Single 512-Bit Static Shift Registers
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S2510A (Seiko Instruments)
2560-Bit CMOS Static RAM
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NMC6551 (National Semiconductor)
1024-Bit (256 x 4) Static RAM
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